Sintering and Porosity Control of „x...GeO2 :„1Àx...SiO2 Sol-Gel Derived Films for Optoelectronic Applications
نویسندگان
چکیده
Sol-gel derived GeO2-doped silica thin films (x)GeO2 :(12x)SiO2 with x 5 5 to 40 mol % were studied for heat-treatments from 500 to 1000°C. In the conventional single component sol-gel process, temperature is the process parameter that controls the porosity of the film. However, our results revealed that by varying Ge-doping, the film porosity, as determined by spectroscopic ellipsometry, can be tailored across the temperature range studied. The mechanisms contributing to the quasi-linear compositionaldependent porosity are Ge precursor chemistry and viscous sintering. This technique can be versatile in applications such as III-V optoelectronic devices realized by quantum-well intermixing. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1819858# All rights reserved.
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